Electronic structure of Fe (0-5 at. %) doped MoO2 thin films studied by resonant photoemission spectroscopy

Details Electronic structure of Fe (0-5 at. %) doped MoO2 thin films studied by resonant photoemission spectroscopy Electronic structure of Fe (0-5 at. %) doped MoO2 thin films studied by resonant photoemission spectroscopy

2008-07-18

arxiv.org/abs/0807.2912v1

J. Phys.: Cond. Mat. 20, 335225 (2008)

Physics

Condensed Matter

Materials Science

16 pages, 4 figures ,. J. Phys. Cond. Mat. (accepted)

Scientific paper

10.1088/0953-8984/20/33/335225

The electronic structure of pulsed laser deposited Mo1-xFexO2 (x=0, 0.02 and 0.05) thin films has been investigated using resonant photoemission spectroscopy near Mo-4p absorption edge. In all the samples a broad Fano- like resonance peak at ~46 eV is observed in the whole area of the valence band which indicates the contribution of the Mo-4d states in the entire valence band region. The doping of Fe in these films leads to decrease in Mo 4d states contributing to electronic states at lower binding energy region. In addition to this, we also observe a shoulder at 4.9 eV in the valence band spectra of doped samples. It is proposed that the origin of this shoulder is due to the Fe hybridised states.

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