Electronic structure of epitaxial graphene layers on SiC: effect of the substrate

Details Electronic structure of epitaxial graphene layers on SiC: effect of the substrate Electronic structure of epitaxial graphene layers on SiC: effect of the substrate

2007-02-13

arxiv.org/abs/cond-mat/0702311v1

Physics

Condensed Matter

Materials Science

Scientific paper

10.1103/PhysRevLett.99.126805

Recent transport measurements on thin graphite films grown on SiC show large coherence lengths and anomalous integer quantum Hall effects expected for isolated graphene sheets. This is the case eventhough the layer-substrate epitaxy of these films implies a strong interface bond that should induce perturbations in the graphene electronic structure. Our DFT calculations confirm this strong substrate-graphite bond in the first adsorbed carbon layer that prevents any graphitic electronic properties for this layer. However, the graphitic nature of the film is recovered by the second and third absorbed layers. This effect is seen in both the (0001)and $(000\bar{1})$ 4H SiC surfaces. We also present evidence of a charge transfer that depends on the interface geometry. It causes the graphene to be doped and gives rise to a gap opening at the Dirac point after 3 carbon layers are deposited in agreement with recent ARPES experiments (T.Ohta et al, Science {\bf 313} (2006) 951).

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