Electronic structure and light-induced conductivity in a transparent refractory oxide

Details Electronic structure and light-induced conductivity in a transparent refractory oxide Electronic structure and light-induced conductivity in a transparent refractory oxide

2004-02-09

arxiv.org/abs/cond-mat/0402218v1

Phys. Rev. Lett. v. 93, p.016408 (2004).

Physics

Condensed Matter

Materials Science

4 pages including 4 figures

Scientific paper

10.1103/PhysRevLett.93.016408

Combined first-principles and experimental investigations reveal the underlying mechanism responsible for a drastic change of the conductivity (by 10 orders of magnitude) following hydrogen annealing and UV-irradiation in a transparent oxide, 12CaO.7Al2O3, found by Hayashi et al. The charge transport associated with photo-excitation of an electron from H, occurs by electron hopping. We identify the atoms participating in the hops, determine the exact paths for the carrier migration, estimate the temperature behavior of the hopping transport and predict a way to enhance the conductivity by specific doping.

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