Electronic structure and anisotropic transport properties in hexagonal YPtIn and LuAgGe ternary compounds

Details Electronic structure and anisotropic transport properties in hexagonal YPtIn and LuAgGe ternary compounds Electronic structure and anisotropic transport properties in hexagonal YPtIn and LuAgGe ternary compounds

2005-08-15

arxiv.org/abs/cond-mat/0508346v1

Physics

Condensed Matter

Materials Science

Scientific paper

10.1088/0953-8984/18/4/030

We present anisotropic, zero applied magnetic field, temperature dependent resistivity measurements on hexagonal, non-magnetic, YPtIn and LuAgGe single crystals. For these materials the in-plane resistivity, $\rho_{ab}$, is significantly higher than the $c$ - axis one, $\rho_c$, with $\rho_{ab}/\rho_c \approx 1.4$ for YPtIn and $\approx 4.2 - 4.7$ for LuAgGe. The connection between the electronic structure and the anisotropic transport properties is discussed using density functional calculations that link the observed anisotropy with a specific shape of Fermi surface and anisotropy of the Fermi velocities.

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