Electronic States of Graphene Grain Boundaries

Details Electronic States of Graphene Grain Boundaries Electronic States of Graphene Grain Boundaries

2010-07-07

arxiv.org/abs/1007.1137v1

Phys. Rev. B 82, 205119 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

10 pages, 4 figures, submitted to Physical Review B

Scientific paper

10.1103/PhysRevB.82.205119

We introduce a model for amorphous grain boundaries in graphene, and find that stable structures can exist along the boundary that are responsible for local density of states enhancements both at zero and finite (~0.5 eV) energies. Such zero energy peaks in particular were identified in STS measurements [J. \v{C}ervenka, M. I. Katsnelson, and C. F. J. Flipse, Nature Physics 5, 840 (2009)], but are not present in the simplest pentagon-heptagon dislocation array model [O. V. Yazyev and S. G. Louie, Physical Review B 81, 195420 (2010)]. We consider the low energy continuum theory of arrays of dislocations in graphene and show that it predicts localized zero energy states. Since the continuum theory is based on an idealized lattice scale physics it is a priori not literally applicable. However, we identify stable dislocation cores, different from the pentagon-heptagon pairs, that do carry zero energy states. These might be responsible for the enhanced magnetism seen experimentally at graphite grain boundaries.

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