Electronic state of a doped Mott-Hubbard insulator at finite temperatures studied using the dynamical mean-field theory

Physics – Condensed Matter – Strongly Correlated Electrons

Scientific paper

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4 pages, 3 figures

Scientific paper

10.1103/PhysRevB.73.041103

We study the electronic state of the doped Mott-Hubbard insulator within Dynamical Mean Field Theory. The evolution of the finite temperature spectral functions as a function of doping show large redistributions of spectral weight in both antiferromagnetic and paramagnetic phases. In particular, a metallic antiferromagnetic state is obtained with a low frequency Slater-splitted quasiparticle peak coexisting with Hubbard bands. In the high temperature paramagnetic metallic phase, upon reducing doping, the system has a crossover through a ``bad metal'' state characterized by an anomalous shift of the quasiparticle peak away from the Fermi energy. We find that the {\it charge} compressibility of the antiferromagnetic metal is dramatically enhanced upon approaching the second order N\'eel line.

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