Electronic spin drift in graphene field effect transistors

Details Electronic spin drift in graphene field effect transistors Electronic spin drift in graphene field effect transistors

2008-02-19

arxiv.org/abs/0802.2628v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 figures

Scientific paper

10.1103/PhysRevLett.100.236603

We studied the drift of electron spins under an applied DC electric field in single layer graphene spin valves in a field effect transport geometry at room temperature. In the metallic conduction regime ($n \simeq 3.5 \times 10^{16}$ m$^{-2}$), for DC fields of about $\pm$70 kV/m applied between the spin injector and spin detector, the spin valve signals are increased/decreased, depending on the direction of the DC field and the carrier type, by as much as $\pm$50%. Sign reversal of the drift effect is observed when switching from hole to electron conduction. In the vicinity of the Dirac neutrality point the drift effect is strongly suppressed. The experiments are in quantitative agreement with a drift-diffusion model of spin transport.

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