Electronic Spectra of Porous Silicon near Fermi Level

Details Electronic Spectra of Porous Silicon near Fermi Level Electronic Spectra of Porous Silicon near Fermi Level

1996-08-17

arxiv.org/abs/cond-mat/9608071v1

Physics

Condensed Matter

7 pages, LaTeX, 3 PostScript figures. Also available at ftp://phot2.niif.spb.su

Scientific paper

Electronic spectra of porous Si have been investigated in the region $<$4 eV
below the Fermi level with specimens subjected to in situ oxygenation and
thermal treatments. The significance of DOS to the photoluminescence and its
degradation in porous Si is discussed. Fine structure of the photoelectron
spectra is found from specimens heated in oxygen at 600 K.

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