Electronic properties of buried hetero-interfaces of LaAlO3 on SrTiO3

Details Electronic properties of buried hetero-interfaces of LaAlO3 on SrTiO3 Electronic properties of buried hetero-interfaces of LaAlO3 on SrTiO3

2006-03-22

arxiv.org/abs/cond-mat/0603598v2

Phys. Rev. B 76, 155111 (2007)

Physics

Condensed Matter

Materials Science

19 pages, 6 figures

Scientific paper

10.1103/PhysRevB.76.155111

We have made very thin films of LaAlO3 on TiO2 terminated SrTiO3 and have measured the properties of the resulting interface in various ways. Transport measurements show a maximum sheet carrier density of 1016 cm-2 and a mobility around 104 cm2 V-1 s-1. In situ ultraviolet photoelectron spectroscopy (UPS) indicates that for these samples a finite density of states exists at the Fermi level. From the oxygen pressure dependence measured in both transport as well as the UPS, we detail, as reported previously by us, that oxygen vacancies play an important role in the creation of the charge carriers and that these vacancies are introduced by the pulsed laser deposition process used to make the heterointerfaces. Under the conditions studied the effect of LaAlO3 on the carrier density is found to be minimal.

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