Electronic mechanism of ion expulsion under UV nanosecond laser excitation of silicon: Experiment and modeling

Details Electronic mechanism of ion expulsion under UV nanosecond laser excitation of silicon: Experiment and modeling Electronic mechanism of ion expulsion under UV nanosecond laser excitation of silicon: Experiment and modeling

2004-03-12

arxiv.org/abs/cond-mat/0403330v2

Applied Physics A 79 (2004) 771-774

Physics

Condensed Matter

Materials Science

Scientific paper

10.1007/s00339-004-2783-y

We present experimental and modeling studies of UV nanosecond pulsed laser desorption and ablation of (111) bulk silicon. The results involve a new approach to the analysis of plume formation dynamics under high-energy photon irradiation of the semiconductor surface. Non-thermal, photo-induced desorption has been observed at low laser fluence, well below the melting threshold. Under ablation conditions, the non-thermal ions have also a high concentration. The origin of these ions is discussed on the basis of electronic excitation of Si surface states associated with the Coulomb explosion mechanism. We present a model describing dynamics of silicon target excitation, heating and harge-carrier transport.

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