Electronic inhomogeneity at magnetic domain walls in strongly-correlated systems

Details Electronic inhomogeneity at magnetic domain walls in strongly-correlated systems Electronic inhomogeneity at magnetic domain walls in strongly-correlated systems

2003-04-11

arxiv.org/abs/cond-mat/0304287v1

Physics

Condensed Matter

Strongly Correlated Electrons

Version submitted to Physical Review Letters, except for minor revisions to references

Scientific paper

10.1209/epl/i2004-10050-8

We show that nano-scale variations of the order parameter in strongly-correlated systems can induce local spatial regions such as domain walls that exhibit electronic properties representative of a different, but nearby, part of the phase diagram. This is done by means of a Landau-Ginzburg analysis of a metallic ferromagnetic system near an antiferromagnetic phase boundary. The strong spin gradients at a wall between domains of different spin orientation drive the formation of a new type of domain wall, where the central core is an insulating antiferromagnet, and connects two metallic ferromagnetic domains. We calculate the charge transport properties of this wall, and find that its resistance is large enough to account for recent experimental results in colossal magnetoresistance materials. The technological implications of this finding for switchable magnetic media are discussed.

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