Electronic Doping and Scattering by Transition Metals on Graphene

Details Electronic Doping and Scattering by Transition Metals on Graphene Electronic Doping and Scattering by Transition Metals on Graphene

2009-03-16

arxiv.org/abs/0903.2837v2

Phys. Rev. B 80, 075406 (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

v2: revised text, additional data and analysis To appear in Phys. Rev. B

Scientific paper

10.1103/PhysRevB.80.075406

We investigate the effects of transition metals (TM) on the electronic doping and scattering in graphene using molecular beam epitaxy combined with in situ transport measurements. The room temperature deposition of TM onto graphene produces clusters that dope n-type for all TM investigated (Ti, Fe, Pt). We also find that the scattering by TM clusters exhibits different behavior compared to 1/r Coulomb scattering. At high coverage, Pt films are able to produce doping that is either n-type or weakly p-type, which provides experimental evidence for a strong interfacial dipole favoring n-type doping as predicted theoretically.

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