Electronic continuum states and far infrared absorption of InAs/GaAs quantum dots

Details Electronic continuum states and far infrared absorption of InAs/GaAs quantum dots Electronic continuum states and far infrared absorption of InAs/GaAs quantum dots

2005-02-21

arxiv.org/abs/cond-mat/0502513v2

Physical Review B 71 (2005) 245329

Physics

Condensed Matter

Other Condensed Matter

8 pages, 10 figures

Scientific paper

10.1103/PhysRevB.71.245329

The electronic continuum states of InAs/GaAs semiconductor quantum dots embedded in a GaAs/AlAs superlattice are theoretically investigated and the far infrared absorption spectra are calculated for a variety of structures and polarizations. The effect of a strong magnetic field applied parallel to the growth direction is also investigated. We predict that the flatness of the InAs/GaAs dots leads to a far infrared absorption which is almost insensitive to the magnetic field, in spite of the reorganization of the continuum into series of quasi-Landau states. We also predict that it is possible to design InAs/GaAs photoconductors which display very strong in-plane absorption.

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