Electronic Band Structure Mapping of Nanotube Transistors by Scanning Photocurrent Microscopy

Details Electronic Band Structure Mapping of Nanotube Transistors by Scanning Photocurrent Microscopy Electronic Band Structure Mapping of Nanotube Transistors by Scanning Photocurrent Microscopy

2007-05-23

arxiv.org/abs/0705.3407v1

Physics

Condensed Matter

Materials Science

4 pages, 4 figures

Scientific paper

Spatially resolved photocurrent measurements on carbon nanotube field-effect transistors (CNFETs) operated in various transport regimes are reported. It is demonstrated that the photocurrents measured at different biasing conditions provide access to the electronic band structure profile of the nanotube channel. A comparison of the profiles with the device switched into n- or p-type states clearly evidences the impact of chemical doping from the ambient. Moreover, we show that scanning photocurrent microscopy constitutes an effective and facile technique for the quantitative determination of the Schottky barrier height in such devices.

Affiliated with

Also associated with

No associations

Rating

Electronic Band Structure Mapping of Nanotube Transistors by Scanning Photocurrent Microscopy does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Electronic Band Structure Mapping of Nanotube Transistors by Scanning Photocurrent Microscopy, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electronic Band Structure Mapping of Nanotube Transistors by Scanning Photocurrent Microscopy will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-402190