Electronic and Optical Properties of ZnIn$_2$Te$_4$

Details Electronic and Optical Properties of ZnIn$_2$Te$_4$ Electronic and Optical Properties of ZnIn$_2$Te$_4$

2002-12-05

arxiv.org/abs/cond-mat/0212121v1

Physics

Condensed Matter

Materials Science

12 pages, 6 figs

Scientific paper

Band structure and optical properties of defect- Chalcopyrite type semiconductor ZnIn$_2$Te$_4$ have been studied by TB-LMTO first principle technique. The optical absorption calculation suggest that ZnIn$_2$Te$_4$ is a direct-gap semiconductor having a band gap of 1.40 eV., which confirms the experimentally measured value. The calculated complex dielectric-function $\epsilon(E) = \epsilon_1(E) + i\epsilon_2(E)$ reveal distinct structures at energies of the critical points in the Brillouin zone.

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