Electronic and optical properties of beryllium chalcogenides/silicon heterostructures

Details Electronic and optical properties of beryllium chalcogenides/silicon heterostructures Electronic and optical properties of beryllium chalcogenides/silicon heterostructures

2006-08-23

arxiv.org/abs/cond-mat/0608514v1

Phys. Rev. B 73, 235307 (2006)

Physics

Condensed Matter

Materials Science

16 pager, 7 figures

Scientific paper

10.1103/PhysRevB.73.235307

We have calculated electronic and optical properties of Si/BeSe$_{0.41}$Te$_{0.59}$ heterostructures by a semiempirical $sp^{3}s^{*}$ tight-binding method. Tight-binding parameters and band bowing of BeSe$_{0.41}$Te$_{0.59}$ are considered through a recent model for highly mismatched semiconductor alloys. The band bowing and the measurements of conduction band offset lead to a type II heterostucture for Si/BeSe$_{0.41}$Te$_{0.59}$ with conduction band minimum in the Si layer and valence band maximum in the BeSe$_{0.41}$Te$_{0.59}$ layer. The electronic structure and optical properties of various (Si$_{2})_{n }$/(BeSe$_{0.41}$Te$_{0.59})_{m}$ [001] superlattices have been considered. Two bands of interface states were found within the bandgap of bulk Si. Our calculations indicate that the optical edges are below the fundamental bandgap of bulk Si and the transitions are optically allowed.

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