Electronic and magnetic properties of GaMnAs: Annealing effects

Details Electronic and magnetic properties of GaMnAs: Annealing effects Electronic and magnetic properties of GaMnAs: Annealing effects

2003-07-04

arxiv.org/abs/cond-mat/0307102v1

Physics

Condensed Matter

4 pages, 6 figures, submitted to Physica E

Scientific paper

10.1016/j.physe.2003.11.173

The effect of short-time and long-time annealing at 250C on the conductivity, hole density, and Curie temperature of GaMnAs single layers and GaMnAs/InGaMnAs heterostructures is studied by in-situ conductivity measurements as well as Raman and SQUID measurements before and after annealing. Whereas the conductivity monotonously increases with increasing annealing time, the hole density and the Curie temperature show a saturation after annealing for 30 minutes. The incorporation of thin InGaMnAs layers drastically enhances the Curie temperature of the GaMnAs layers.

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