Electron tunnel rates in a donor-silicon single electron transistor hybrid

Details Electron tunnel rates in a donor-silicon single electron transistor hybrid Electron tunnel rates in a donor-silicon single electron transistor hybrid

2009-12-12

arxiv.org/abs/0912.2431v1

Phys. Rev. B 81, 235318 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

10 pages, 3 figures

Scientific paper

10.1103/PhysRevB.81.235318

We investigate a hybrid structure consisting of $20\pm4$ implanted $^{31}$P atoms close to a gate-induced silicon single electron transistor (SiSET). In this configuration, the SiSET is extremely sensitive to the charge state of the nearby centers, turning from the off state to the conducting state when the charge configuration is changed. We present a method to measure fast electron tunnel rates between donors and the SiSET island, using a pulsed voltage scheme and low-bandwidth current detection. The experimental findings are quantitatively discussed using a rate equation model, enabling the extraction of the capture and emission rates.

Affiliated with

Also associated with

No associations

Rating

Electron tunnel rates in a donor-silicon single electron transistor hybrid does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Electron tunnel rates in a donor-silicon single electron transistor hybrid, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electron tunnel rates in a donor-silicon single electron transistor hybrid will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-533353