Physics – Condensed Matter – Mesoscale and Nanoscale Physics
Scientific paper
2003-11-03
Journal of Applied Physics 95 (7), 3587-3593 (2004)
Physics
Condensed Matter
Mesoscale and Nanoscale Physics
26 pages, 1 table, 9 figures, revised version: new references and discussions added
Scientific paper
10.1063/1.1650885
The electron transport in the two-dimensional gas formed in tensile-strained Si1-xGex/Si/Si1-xGex heterostructures is investigated using Monte Carlo simulation. At first the electron mobility is studied in ungated modulation doped structures. The calculation matches very well the experimental results over a wide range of electron density. The mobility typically varies between 1100 cm2/Vs in highly-doped structures and 2800 cm2/Vs at low electron density. The mobility is shown to be significantly influenced by the thickness of the spacer layer separating the strained Si channel from the pulse-doped supply layers. Then the electron transport is investigated in a gated modulation-doped structure in which the contribution of parasitic paths is negligible. The mobility is shown to be higher than in comparable ungated structures and dependent on the gate voltage, as a result of the electron density dependence of remote impurity screening.
Dollfus Philippe
Galdin-Retailleau S.
Hackbarth T.
Herzog H.-J.
Monsef F.
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