Electron Transport in High-Tc Superconducting Grain Boundary Junctions

Details Electron Transport in High-Tc Superconducting Grain Boundary Junctions Electron Transport in High-Tc Superconducting Grain Boundary Junctions

1999-11-02

arxiv.org/abs/cond-mat/9911009v1

Physics

Condensed Matter

Superconductivity

9 pages, 6 figures. HTML-file

Scientific paper

The results of dc, microwave and magnetic measurements of YBCO bicrystal junctions on r-cut sapphire are presented. The junctions with high resistance 10-20 W and IcRN= 1-2 mV and tolerance of RNS around 30% on chip allow to create microwave circuits with low integration (up to 10 junctions on chip). The microwave dynamics of the junction with superconducting current-phase relation fits with sin j relation better than 5%, that clear indicates on tunnel conductivity between two YBCO electrodes. It was found that critical current density depends as square root on the interface transparency in accordance with prediction of superconducting current transport via Andreev's bound surface states. The specific properties of current transport in high-Tc grain boundary junctions with taking into account d-wave type of gap order in high-Tc superconductor are discussed.

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