Electron transport in a slot-gate Si MOSFET

Details Electron transport in a slot-gate Si MOSFET Electron transport in a slot-gate Si MOSFET

2008-03-31

arxiv.org/abs/0803.4432v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

To appear in Europhys. Lett

Scientific paper

10.1209/0295-5075/82/47001

The transversal and longitudinal resistance in the quantum Hall effect regime was measured in a Si MOSFET sample in which a slot-gate allows one to vary the electron density and filling factor in different parts of the sample. In case of unequal gate voltages, the longitudinal resistances on the opposite sides of the sample differ from each other because the originated Hall voltage difference is added to the longitudinal voltage only on one side depending on the gradient of the gate voltages and the direction of the external magnetic field. After subtracting the Hall voltage difference, the increase in longitudinal resistance is observed when electrons on the opposite sides of the slot occupy Landau levels with different spin orientations.

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