Electron states of mono- and bilayer graphene on SiC probed by STM

Details Electron states of mono- and bilayer graphene on SiC probed by STM Electron states of mono- and bilayer graphene on SiC probed by STM

2007-02-19

arxiv.org/abs/cond-mat/0702406v1

Physical Review B 76, 4 (2007) 041403

Physics

Condensed Matter

Materials Science

4 pages, 3 figures submitted

Scientific paper

10.1103/PhysRevB.76.041403

We present a scanning tunneling microscopy (STM) study of a gently-graphitized 6H-SiC(0001) surface in ultra high vacuum. From an analysis of atomic scale images, we identify two different kinds of terraces, which we unambiguously attribute to mono- and bilayer graphene capping a C-rich interface. At low temperature, both terraces show $(\sqrt{3}\times \sqrt{3})$ quantum interferences generated by static impurities. Such interferences are a fingerprint of $\pi$-like states close to the Fermi level. We conclude that the metallic states of the first graphene layer are almost unperturbed by the underlying interface, in agreement with recent photoemission experiments (A. Bostwick et al., Nature Physics 3, 36 (2007))

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