Electron Spin Relaxation under Drift in GaAs

Details Electron Spin Relaxation under Drift in GaAs Electron Spin Relaxation under Drift in GaAs

2003-04-10

arxiv.org/abs/cond-mat/0304227v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures, one table. Scheduled for publication in the May 26, 2003 issue of Applied Physics Letters (039321APL)

Scientific paper

10.1063/1.1578180

Based on a Monte Carlo method, we investigate the influence of transport conditions on the electron spin relaxation in GaAs. The decay of initial electron spin polarization is calculated as a function of distance under the presence of moderate drift fields and/or non-zero injection energies. For relatively low fields (a couple of kV/cm), a substantial amount of spin polarization is preserved for several microns at 300 K. However, it is also found that the spin relaxation rate increases rapidly with the drift field, scaling as the square of the electron wavevector in the direction of the field. When the electrons are injected with a high energy, a pronounced decrease is observed in the spin relaxation length due to an initial increase in the spin precession frequency. Hence, high-field or high-energy transport conditions may not be desirable for spin-based devices.

Affiliated with

Also associated with

No associations

Rating

Electron Spin Relaxation under Drift in GaAs does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Electron Spin Relaxation under Drift in GaAs, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electron Spin Relaxation under Drift in GaAs will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-273846