Electron Spin Polarization in Resonant Interband Tunneling Devices

Details Electron Spin Polarization in Resonant Interband Tunneling Devices Electron Spin Polarization in Resonant Interband Tunneling Devices

2002-11-14

arxiv.org/abs/cond-mat/0211300v1

Physics

Condensed Matter

Materials Science

11 pages, 4 eps figures

Scientific paper

10.1103/PhysRevB.68.125332

We study spin-dependent interband resonant tunneling in double-barrier InAs/AlSb/ GaMnSb heterostructures. We demonstrate that these structures can be used as spin filters utilizing spin-selective tunneling of electrons through the light-hole resonant channel. High densities of the spin polarized electrons injected into bulk InAs make spin resonant tunneling devices a viable alternative for injecting spins into a semiconductor. Another striking feature of the proposed devices is the possibility of inducing additional resonant channels corresponding to the heavy holes. This can be implemented by saturating the in-plane magnetization in the quantum well.

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