Electron spin orientation under in-plane optical excitation in GaAs quantum wells

Details Electron spin orientation under in-plane optical excitation in GaAs quantum wells Electron spin orientation under in-plane optical excitation in GaAs quantum wells

2012-02-09

arxiv.org/abs/1202.2040v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

9 pages, 4 figures

Scientific paper

We study the optical orientation of electron spins in GaAs/AlGaAs quantum wells for excitation in growth direction and for in-plane excitation. The time and polarization resolved photoluminescence excitation measurements show for resonant excitation of the heavy-hole conduction band transition a negligible degree of electron spin polarization for in-plane excitation and nearly 100% for excitation in growth direction. For resonant excitation of the light-hole conduction band transition, the excited electron spin polarization has for in-plane excitation (in growth direction) excitation the same (opposite) direction as for excitation into the continuum. The experimental results are well explained by an accurate multiband theory of excitonic absorption taking fully into account electron-hole Coulomb correlations and heavy-hole light-hole coupling.

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