Electron spin interferometry using a semiconductor ring structure

Details Electron spin interferometry using a semiconductor ring structure Electron spin interferometry using a semiconductor ring structure

2005-01-13

arxiv.org/abs/cond-mat/0501306v1

Appl. Phys. Lett. 86, 162107 (2005)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 2 figures

Scientific paper

10.1063/1.1906301

A ring structure fabricated from GaAs is used to achieve interference of the net spin polarization of conduction band electrons. Optically polarized spins are split into two packets by passing through two arms of the ring in the diffusive transport regime. Optical pumping with circularly polarized light on one arm establishes dynamic nuclear polarization which acts as a local effective magnetic field on electron spins due to the hyperfine interaction. This local field causes one spin packet to precess faster than the other, thereby controlling the spin interference when the two packets are combined.

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