Electron spin decoherence in isotope-enriched silicon

Details Electron spin decoherence in isotope-enriched silicon Electron spin decoherence in isotope-enriched silicon

2010-08-13

arxiv.org/abs/1008.2382v2

Phys. Rev. Lett. 105, 187602 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1103/PhysRevLett.105.187602

Silicon is promising for spin-based quantum computation because nuclear spins, a source of magnetic noise, may be eliminated through isotopic enrichment. Long spin decoherence times, $T_2$, have been measured in isotope-enriched silicon but come far short of the $T_2 = 2 T_1$ limit. The effect of nuclear spins on $T_2$ is well established. However, the effect of background electron spins from ever present residual phosphorus impurities in silicon can also produce significant decoherence. We study spin decoherence decay as a function of donor concentration, $^{29}$Si concentration, and temperature using cluster expansion techniques specifically adapted to the problem of a sparse dipolarly coupled electron spin bath. Our results agree with the existing experimental spin echo data in Si:P and establish the importance of background dopants as the ultimate decoherence mechanism in isotope-enriched silicon.

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