Electron Spin Decoherence in Bulk and Quantum Well Zincblende Semiconductors

Details Electron Spin Decoherence in Bulk and Quantum Well Zincblende Semiconductors Electron Spin Decoherence in Bulk and Quantum Well Zincblende Semiconductors

2000-04-26

arxiv.org/abs/cond-mat/0004461v2

Physics

Condensed Matter

Materials Science

11 pages, 3 figures

Scientific paper

10.1103/PhysRevB.64.161301

A theory for longitudinal (T1) and transverse (T2) electron spin coherence times in zincblende semiconductor quantum wells is developed based on a non-perturbative nanostructure model solved in a fourteen-band restricted basis set. Distinctly different dependences of coherence times on mobility, quantization energy, and temperature are found from previous calculations. Quantitative agreement between our calculations and measurements is found for GaAs/AlGaAs, InGaAs/InP, and GaSb/AlSb quantum wells.

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