Electron space charge effect on spin injection into semiconductors

Details Electron space charge effect on spin injection into semiconductors Electron space charge effect on spin injection into semiconductors

2002-12-06

arxiv.org/abs/cond-mat/0212133v2

Phys. Rev. B 67, 193201 (2003)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures, accepted for publication by Phys. Rev. B

Scientific paper

10.1103/PhysRevB.67.193201

We consider spin polarized transport in a ferromagnet-insulator/semiconductor/insulator-ferromagnet (F1-I-S-I-F2) junction. We find that the spin current is strongly dependent on the spin configurations, the doping and space charge distribution in the semiconductor. When the ferromagnet-semiconductor interface resistance is comparable to the semiconductor resistance, the magnetoresistance ratio of this junction can be greatly enhanced under appropriate doping when the space charge effect in the nonequilibrium transport processes is taken into consideration.

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