Electron Scattering and Hybrid Phonons in Low Dimensional Laser Structures made with GaAs/AlxGa1-xAs

Details Electron Scattering and Hybrid Phonons in Low Dimensional Laser Structures made with GaAs/AlxGa1-xAs Electron Scattering and Hybrid Phonons in Low Dimensional Laser Structures made with GaAs/AlxGa1-xAs

2009-09-04

arxiv.org/abs/0909.0853v1

Semicond. Sci. Technol. 24 (2009) 095014

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

11 pages

Scientific paper

10.1088/0268-1242/24/9/095014

We theoretically and numerically present the hybrid phonon modes for the double heterostructure GaAs/AlxGa1-xAs and their interactions with electrons. More specifically, we have calculated the electron capture within a symmetric quantum well via the emission of hybrid phonons. Our investigation shows that the capture rates via the hybrid phonons are matched to the rates predicted by the dielectric continuum (DC) model and the concentration of aluminium which is an important parameter for controlling the electron capture process in light emitting diodes (LED).

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