Electron Quasiparticles Drive the Superconductor-to-Insulator Transition in Homogeneously Disordered Thin Films

Details Electron Quasiparticles Drive the Superconductor-to-Insulator Transition in Homogeneously Disordered Thin Films Electron Quasiparticles Drive the Superconductor-to-Insulator Transition in Homogeneously Disordered Thin Films

2001-04-26

arxiv.org/abs/cond-mat/0104504v2

Phil. Mag., vol. 81, 847-854 (2001)

Physics

Condensed Matter

This article is included in the Festschrift for Prof. Michael Pollak on occasion of his 75th birthday

Scientific paper

10.1080/13642810110060566

Transport data on Bi, MoGe, and PbBi/Ge homogeneously-disordered thin films demonstrate that the critical resistivity, $R_c$, at the nominal insulator-superconductor transition is linearly proportional to the normal sheet resistance, $R_N$. In addition, the critical magnetic field scales linearly with the superconducting energy gap and is well-approximated by $H_{c2}$. Because $R_N$ is determined at high temperatures and $H_{c2}$ is the pair-breaking field, the two immediate consequences are: 1) electron-quasiparticles populate the insulating side of the transition and 2) standard phase-only models are incapable of describing the destruction of the superconducting state. As gapless electronic excitations populate the insulating state, the universality class is no longer the 3D XY model. The lack of a unique critical resistance in homogeneously disordered films can be understood in this context. In light of the recent experiments which observe an intervening metallic state separating the insulator from the superconductor in homogeneously disordered MoGe thin films, we argue that the two transitions that accompany the destruction of superconductivity are 1) superconductor to Bose metal in which phase coherence is lost and 2) Bose metal to localized electron insulator via pair-breaking.

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