Electron properties of fluorinated single-layer graphene transistors

Details Electron properties of fluorinated single-layer graphene transistors Electron properties of fluorinated single-layer graphene transistors

2010-05-19

arxiv.org/abs/1005.3474v3

Phys. Rev. B 82, 073403 (2010)

Physics

Condensed Matter

Materials Science

Scientific paper

We have fabricated transistor structures using fluorinated single-layer graphene flakes and studied their electronic properties at different temperatures. Compared with pristine graphene, fluorinated graphene has very large and strongly temperature dependent resistance in the electro-neutrality region. We show that fluorination creates a mobility gap in graphene's spectrum where electron transport takes place via localised electron states.

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