Electron-Phonon Interaction in Embedded Semiconductor Nanostructures

Details Electron-Phonon Interaction in Embedded Semiconductor Nanostructures Electron-Phonon Interaction in Embedded Semiconductor Nanostructures

2006-10-15

arxiv.org/abs/cond-mat/0610404v1

Physics

Condensed Matter

Materials Science

Scientific paper

10.1103/PhysRevB.75.235320

The modification of acoustic phonons in semiconductor nanostructures embedded in a host crystal is investigated including corrections due to strain within continuum elasticity theory. Effective elastic constants are calculated employing {\em ab initio} density functional theory. For a spherical InAs quantum dot embedded in GaAs barrier material, the electron-phonon coupling is calculated. Its strength is shown to be suppressed compared to the assumption of bulk phonons.

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