Electron-phonon interaction effects on the direct gap transitions of nanoscale Si films

Details Electron-phonon interaction effects on the direct gap transitions of nanoscale Si films Electron-phonon interaction effects on the direct gap transitions of nanoscale Si films

2011-03-21

arxiv.org/abs/1103.4102v4

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

15 pages, 4 Figure, Appl. Phys. Lett

Scientific paper

This study shows that the dielectric function of crystalline Si quantum wells (c-Si QW) is influenced by both carrier confinement and electron-phonon interactions. The energy shifts and lifetime broadening of the excitonic E1 direct gap transition of c-Si QWs from 2 to 10 nm are found to have a significant dimensional and temperature dependence that can be traced to changes in the phonon dispersion of nanoscale films. The influence of electron-phonon interactions on the dielectric function was verified by altering the phonon dispersion using different dielectric layers above a 5 nm c-Si QW.

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