Electron-phonon induced spin relaxation in InAs quantum dots

Details Electron-phonon induced spin relaxation in InAs quantum dots Electron-phonon induced spin relaxation in InAs quantum dots

2003-10-07

arxiv.org/abs/cond-mat/0310146v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 2 figures, to be appear in Physica E: Proceedings of the 11 International Conference on Narrow Gap Semiconductors

Scientific paper

10.1016/j.physe.2003.08.009

We have calculated spin relaxation rates in parabolic quantum dots due to the phonon modulation of the spin-orbit interaction in presence of an external magnetic field. Both, deformation potential and piezoelectric electron-phonon coupling mechanisms are included within the Pavlov-Firsov spin-phonon Hamiltonian. Our results have demonstrated that, in narrow gap materials, the electron-phonon deformation potential and piezoelectric coupling give comparable contributions as spin relaxation processes. For large dots, the deformation potential interaction becomes dominant. This behavior is not observed in wide or intermediate gap semiconductors, where the piezoelectric coupling, in general, governs the spin relaxation processes. We also have demonstrated that spin relaxation rates are particularly sensitive to the Land\'e $g$-factor.

Affiliated with

Also associated with

No associations

Rating

Electron-phonon induced spin relaxation in InAs quantum dots does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Electron-phonon induced spin relaxation in InAs quantum dots, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electron-phonon induced spin relaxation in InAs quantum dots will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-320341