Electron Paramagnetic Resonance of Boron Acceptors in Isotopically Purified Silicon

Details Electron Paramagnetic Resonance of Boron Acceptors in Isotopically Purified Silicon Electron Paramagnetic Resonance of Boron Acceptors in Isotopically Purified Silicon

2010-03-23

arxiv.org/abs/1003.4339v1

Physics

Condensed Matter

Materials Science

4 pages, 3 figures

Scientific paper

The electron paramagnetic resonance (EPR) linewidths of B acceptors in Si are found to reduce dramatically in isotopically purified 28Si single crystals. Moreover, extremely narrow substructures in the EPR spectra are visible corresponding to either an enhancement or a reduction of the absorbed microwave on resonance. The origin of the substructures is attributed to a combination of simultaneous double excitation and spin relaxation in the four level spin system of the acceptors. A spin population model is developed which qualitatively describes the experimental results.

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