Electron mobility on a surface of dielectric media: influence of surface level atoms

Details Electron mobility on a surface of dielectric media: influence of surface level atoms Electron mobility on a surface of dielectric media: influence of surface level atoms

2006-12-30

arxiv.org/abs/cond-mat/0701009v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

6 pages, 1 figure

Scientific paper

We calculate the contribution to the electron scattering rate from the surface level atoms (SLA), proposed in [A.M. Dyugaev, P.D. Grigoriev, JETP Lett. 78, 466 (2003)]. The inclusion of these states into account was sufficient to explain the long-standing puzzles in the temperature dependence of the surface tension of both He isotopes and to reach a very good agreement between theory and experiment. We calculate the contribution from these SLA to the surface electron scattering rate and explain some features in the temperature dependence of the surface electron mobility. This contribution is essential at low temperature $T<0.5$ when the He vapor concentration is exponentially small. For an accurate calculation of the electron mobility one also needs to consider the influence of the clamping electric field on the surface electron wave function and the temperature dependence of the He3 chemical potential.

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