Electron magnetotransport in GaAs/AlGaAs superlattices with weak and strong inter-well coupling

Details Electron magnetotransport in GaAs/AlGaAs superlattices with weak and strong inter-well coupling Electron magnetotransport in GaAs/AlGaAs superlattices with weak and strong inter-well coupling

2007-07-25

arxiv.org/abs/0707.3692v1

Microelectronics Journal 39, 411 (2008)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3 pages, 3 figures, elsart/PHYEAUTH macros; presented on the LDSD 2007 Conference in the Caribbean Archipelago San Andres, Col

Scientific paper

10.1016/j.mejo.2007.07.013

We report on magnetotransport measurements in two MBE-grown GaAs/AlGaAs superlattices formed by wide and narrow quantum wells and thin Si-doped barriers subject to tilted magnetic fields. It has been shown that illumination of the strongly coupled superlattice with narrow wells leads to reduction of its dimensionality from the 3D to 2D. The illumination-induced transition is revealed by remarkable change of magnetoresistance curves as compared to those measured before illumination. The experimental data along with tight-binding model calculations indicate that the illumination not only enhances the electron concentration but also suppresses the electron tunneling through the barriers.

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