Electron localization in sound absorption oscillations in the quantum Hall effect regime

Details Electron localization in sound absorption oscillations in the quantum Hall effect regime Electron localization in sound absorption oscillations in the quantum Hall effect regime

1999-10-27

arxiv.org/abs/cond-mat/9910450v1

Semiconductors 31, 384 (1997)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

RevTeX 6 pages+6 EPS pics

Scientific paper

10.1134/1.1187168

The absorption coefficient for surface acoustic waves in a piezoelectric insulator in contact with a GaAs/AlGaAs heterostructure (with two-dimensional electron mobility $\mu= 1.3\times 10^5 cm^2/V\cdot s)$ at T=4.2K) via a small gap has been investigated experimentally as a function of the frequency of the wave, the width of the vacuum gap, the magnetic field, and the temperature. The magnetic field and frequency dependencies of the high-frequency conductivity (in the region 30-210 MHz) are calculated and analyzed. The experimental results can be explained if it assumed that there exists a fluctuation potential in which current carrier localization occurs. The absorption of the surface acoustic waves in an interaction with two-dimensional electrons localized in the energy "tails" of Landau levels is discussed.

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