Electron-ion recombination of Si IV forming Si III: Storage-ring measurement and multiconfiguration Dirac-Fock calculations

Details Electron-ion recombination of Si IV forming Si III: Storage-ring measurement and multiconfiguration Dirac-Fock calculations Electron-ion recombination of Si IV forming Si III: Storage-ring measurement and multiconfiguration Dirac-Fock calculations

2007-09-10

arxiv.org/abs/0709.1363v1

E. W. Schmidt et al., Phys. Rev. A 76, 032717 (2007)

Physics

Atomic Physics

13 pages, 9 figures, 3 tables. Accepted for publication in Physical Review A

Scientific paper

10.1103/PhysRevA.76.032717

The electron-ion recombination rate coefficient for Si IV forming Si III was measured at the heavy-ion storage-ring TSR. The experimental electron-ion collision energy range of 0-186 eV encompassed the 2p(6) nl n'l' dielectronic recombination (DR) resonances associated with 3s to nl core excitations, 2s 2p(6) 3s nl n'l' resonances associated with 2s to nl (n=3,4) core excitations, and 2p(5) 3s nl n'l' resonances associated with 2p to nl (n=3,...,infinity) core excitations. The experimental DR results are compared with theoretical calculations using the multiconfiguration Dirac-Fock (MCDF) method for DR via the 3s to 3p n'l' and 3s to 3d n'l' (both n'=3,...,6) and 2p(5) 3s 3l n'l' (n'=3,4) capture channels. Finally, the experimental and theoretical plasma DR rate coefficients for Si IV forming Si III are derived and compared with previously available results.

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