4. Physics
  5. Atomic Physics

A. S. Jaroshevich

Physics – Atomic Physics

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Institute of Semiconductor Physics, Novosibirsk, 630090, Russia
Institute of Semiconductor Physics, 630090 Novosibrisk, Russia

Anisotropic fragmentation in low-energy dissociative recombination

Physics – Atomic Physics
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Atomic and electronic engineering of p-GaAs-(Cs, O)-vacuum interface

Physics
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Development of spin polarized electron photocathodes: GaAs-GaAsP superlattice and GaAs-AlGaAs superlattice with DBR

Physics
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Electron-ion recombination of Si IV forming Si III: Storage-ring measurement and multiconfiguration Dirac-Fock calculations

Physics – Atomic Physics
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