Electron interaction with domain walls in antiferromagnetically coupled multilayers

Details Electron interaction with domain walls in antiferromagnetically coupled multilayers Electron interaction with domain walls in antiferromagnetically coupled multilayers

2003-07-17

arxiv.org/abs/cond-mat/0307414v1

Physics

Condensed Matter

Materials Science

5 pages with 3 figures

Scientific paper

10.1209/epl/i2003-00597-2

For antiferromagnetically coupled Fe/Cr multilayers the low field contribution to the resistivity, which is caused by the domain walls, is strongly enhanced at low temperatures. The low temperature resistivity varies according to a power law with the exponent about 0.7 to 1. This behavior can not be explained assuming ballistic electron transport through the domain walls. It is necessary to invoke the suppression of anti-localization effects (positive quantum correction to conductivity) by the nonuniform gauge fields caused by the domain walls.

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