Electron interaction-driven insulating ground state in Bi2Se3 topological insulators in the two dimensional limit

Details Electron interaction-driven insulating ground state in Bi2Se3 topological insulators in the two dimensional limit Electron interaction-driven insulating ground state in Bi2Se3 topological insulators in the two dimensional limit

2010-11-04

arxiv.org/abs/1011.1055v1

Phys. Rev. B 83, 165440 (2011)

Physics

Condensed Matter

Materials Science

4 figures

Scientific paper

We report a transport study of ultrathin Bi2Se3 topological insulators with thickness from one quintuple layer to six quintuple layers grown by molecular beam epitaxy. At low temperatures, the film resistance increases logarithmically with decreasing temperature, revealing an insulating ground state. The sharp increase of resistance with magnetic field, however, indicates the existence of weak antilocalization, which should reduce the resistance as temperature decreases. We show that these apparently contradictory behaviors can be understood by considering the electron interaction effect, which plays a crucial role in determining the electronic ground state of topological insulators in the two dimensional limit.

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