Electron-Hole Asymmetry of Spin Injection and Transport in Single-Layer Graphene

Details Electron-Hole Asymmetry of Spin Injection and Transport in Single-Layer Graphene Electron-Hole Asymmetry of Spin Injection and Transport in Single-Layer Graphene

2009-03-05

arxiv.org/abs/0903.1130v1

Phys. Rev. Lett. 102, 137205 (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

To appear in PRL

Scientific paper

10.1103/PhysRevLett.102.137205

Spin-dependent properties of single-layer graphene (SLG) have been studied by non-local spin valve measurements at room temperature. Gate voltage dependence shows that the non-local magnetoresistance (MR) is proportional to the conductivity of the SLG, which is the predicted behavior for transparent ferromagnetic/nonmagnetic contacts. While the electron and hole bands in SLG are symmetric, gate voltage and bias dependence of the non-local MR reveal an electron-hole asymmetry in which the non-local MR is roughly independent of bias for electrons, but varies significantly with bias for holes.

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