Electron Flow in Circular n-p Junctions of Bilayer Graphene

Details Electron Flow in Circular n-p Junctions of Bilayer Graphene Electron Flow in Circular n-p Junctions of Bilayer Graphene

2009-05-21

arxiv.org/abs/0905.3467v3

Phys. Rev. B 80, 075416 (2009) [6 pages]

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Published version 6 pages, 5 figures

Scientific paper

10.1103/PhysRevB.80.075416

We present a theoretical study of electron wave functions in ballistic circular n-p junctions of bilayer graphene. Similarly to the case of a circular n-p junction of monolayer graphene, we find that (i) the wave functions form caustics inside the circular region, and (ii) the shape of these caustics are well described by a geometrical optics model using the concept of a negative refractive index. In contrast to the monolayer case, we show that the strong focusing effect is absent in the bilayer. We explain these findings in terms of the angular dependence of Klein tunneling at a planar n-p junction.

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