Physics – Condensed Matter – Other Condensed Matter
Scientific paper
2004-11-12
Solid State Electronics 49 (8), 1320-1329 (2005)
Physics
Condensed Matter
Other Condensed Matter
25 pages, 8 figures, 1 table, revised version, discussions and references added
Scientific paper
Based on Monte Carlo simulation, we report the study of the inversion layer mobility in n-channel strained Si/ Si1-xGex MOS structures. The influence of the strain in the Si layer and of the doping level is studied. Universal mobility curves mueff as a function of the effective vertical field Eeff are obtained for various state of strain, as well as a fall-off of the mobility in weak inversion regime, which reproduces correctly the experimental trends. We also observe a mobility enhancement up to 120 % for strained Si/ Si0.70Ge0.30, in accordance with best experimental data. The effect of the strained Si channel thickness is also investigated: when decreasing the thickness, a mobility degradation is observed under low effective field only. The role of the different scattering mechanisms involved in the strained Si/ Si1-xGex MOS structures is explained. In addition, comparison with experimental results is discussed in terms of SiO2/ Si interface roughness, as well as surface roughness of the SiGe substrate on which strained Si is grown.
Aubry-Fortuna V.
Dollfus Philippe
Galdin-Retailleau S.
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