Electron drift velocity control in GaAs-in-Al2O3 quantum wire transistor structure due to the electron scattering rate alteration

Details Electron drift velocity control in GaAs-in-Al2O3 quantum wire transistor structure due to the electron scattering rate alteration Electron drift velocity control in GaAs-in-Al2O3 quantum wire transistor structure due to the electron scattering rate alteration

2008-06-19

arxiv.org/abs/0806.3181v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures

Scientific paper

Electron transport in the transistor structure based on thin undoped GaAs-in-Al2O3 quantum wire is simulated by ensemble Monte-Carlo method taking into account electron scattering by the phonons and surface roughness. The influence of surface roughness height on electron drift velocity at 77 and 300 K is investigated for the values of longitudinal electric field strength of 0.1 and 1.0 kV/cm. A possibility of electron drift velocity control due to variation of the bias applied to the gates, which results in the electron scattering rate alteration, is ascertained.

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