Electron bunching in triple quantum dot interferometers

Details Electron bunching in triple quantum dot interferometers Electron bunching in triple quantum dot interferometers

2010-02-17

arxiv.org/abs/1002.3252v2

Chem. Phys. 375, 284 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

8 pages, 5 figures

Scientific paper

10.1016/j.chemphys.2010.06.017

We study electron transport through a triple quantum dot in ring configuration at finite bias. In particular, we analyze the influence of a gate voltage that detunes one of the dots, such that one branch of the interferometer becomes off-resonant. It turns out that then interference effects fade away, i.e., the current becomes independent of a penetrating flux and the detuning. The noise properties which are characterized by the full-counting statistics, however, are governed by bunching effects that may be tuned by the gate voltage. Analytical results for limiting cases support this picture. A possible application is the construction of current sources with widely tunable shot noise properties.

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