Electron and Phonon Temperature Relaxation in Semiconductors Excited by Thermal Pulse

Details Electron and Phonon Temperature Relaxation in Semiconductors Excited by Thermal Pulse Electron and Phonon Temperature Relaxation in Semiconductors Excited by Thermal Pulse

2002-02-28

arxiv.org/abs/cond-mat/0202540v1

Journ. Appl. Phys. 91, 183 (2002)

Physics

Condensed Matter

33 pages, 16 figures

Scientific paper

10.1063/1.1424057

Electron and phonon transient temperatures are analyzed in the case of nondegenerate semiconductors. An analytical solution is obtained for rectangular laser pulse absorption. It is shown that thermal diffusion is the main energy relaxation mechanism in the phonon subsystem. The mechanism depends on the correlation between the sample length and the electron cooling length in an electron subsystem. Energy relaxation occurs by means of the electron thermal diffusion in thin samples (), and by means of the electron-phonon energy interaction in thick samples (). Characteristic relaxation times are obtained for all the cases, and analysis of these times is made. Electron and phonon temperature distributions in short and long samples are qualitatively and quantitatively analyzed for different correlations between the laser pulse duration and characteristic times.

Affiliated with

Also associated with

No associations

Rating

Electron and Phonon Temperature Relaxation in Semiconductors Excited by Thermal Pulse does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Electron and Phonon Temperature Relaxation in Semiconductors Excited by Thermal Pulse, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electron and Phonon Temperature Relaxation in Semiconductors Excited by Thermal Pulse will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-516242