Electromodulation of the Magnetoresistance in Diluted Magnetic Semiconductors Based Heterostructures

Details Electromodulation of the Magnetoresistance in Diluted Magnetic Semiconductors Based Heterostructures Electromodulation of the Magnetoresistance in Diluted Magnetic Semiconductors Based Heterostructures

2002-07-11

arxiv.org/abs/cond-mat/0207287v1

Physics

Condensed Matter

Materials Science

4 pages, 5 figures included

Scientific paper

10.1016/S0038-1098(02)00622-1

We study the properties of heterostructures formed by two layers of diluted magnetic semiconductor separated by a nonmagnetic semiconductor layer. We find that there is a RKKY-type exchange coupling between the magnetic layers that oscilles between ferromagnetic and antiferromagnetic as a function of the different parameters in the problem. The different transport properties of these phases make that this heterostructure presents strong magnetoresistive effects. The coupling can be also modified by an electric field. We propose that it is possible to alter dramatically the electrical resistance of the heterostructure by applying an electric field. Our results indicate that in a single gated sample the magnetoresistance could be modulated by with an electrical bias voltage.

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